[1]廖陆威,冯全源.无源标签中的全MOS电压基准源[J].应用科技,2018,45(03):35-38,43.[doi:10.11991/yykj.201708007]
 LIAO Luwei,FENG Quanyuan.All-MOS voltage reference for passive tag[J].Applied science and technology,2018,45(03):35-38,43.[doi:10.11991/yykj.201708007]
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无源标签中的全MOS电压基准源(/HTML)
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《应用科技》[ISSN:1009-671X/CN:23-1191/U]

卷:
第45卷
期数:
2018年03期
页码:
35-38,43
栏目:
现代电子技术
出版日期:
2018-05-05

文章信息/Info

Title:
All-MOS voltage reference for passive tag
作者:
廖陆威 冯全源
西南交通大学 微电子研究所, 四川 成都 611756
Author(s):
LIAO Luwei FENG Quanyuan
Institute of Microelectronics, Southwest Jiaotong University, Chengdu 611756, China
关键词:
基准电压射频识别标签无源标签电源抑制比线性调整率温度系数低电压低功耗
Keywords:
voltage referenceRFID tagpassive tagpower supply rejection ratio (PSRR)linear regulation ratetemperature coefficientlow voltagelow power consumption
分类号:
TN402
DOI:
10.11991/yykj.201708007
文献标志码:
A
摘要:
为了解决传统基准源功耗和版图面积较大而无法适用于超高频射频识别技术中无源标签的设计,设计一无运放、全MOSFETs(metal oxide field-effect transistor)构成的低压低功耗基准电压源。提出的全MOS结构的基准核心电路,有良好的温度特性;加入了预稳压电路而摒弃传统的运放设计,提高电源抑制比。仿真结果表明,在1.5 V典型供电电压下,输出的基准电压为619 mV,静态功耗为1.8 μW;1.5~5 V基准电压变化22 μV,线性调整率为4.9 μV/V;低频时电源抑制比高达-102 dB;-20~120°的温度系数为6.2×10-6/℃。该设计尤其适用于要求低成本、低功耗的超高频射频识别标签芯片。
Abstract:
The traditional reference source has a large power consumption and territory area, therefore, it is inapplicable for the design of the passive tag in the ultrahigh RFID technology. A voltage reference source with low voltage, low power consumption, without operational amplifier and constituted by all-MOS tube was designed, a new all-MOS tube reference core circuit was proposed. The temperature property is excellent. A pre-stabilized voltage circuit was added, the traditional design of operational amplifier was abandoned and the PSRR was increased. Simulation results showed that, at the typical supply voltage of 1.5V, the output of voltage reference was 619mV and the static power consumption was 1.8 μW; at 1.5 V~5 V, the voltage reference changed by 22 μV, the linear regulation rate was 4.9 μV/V; at low frequency, the PSRR was as high as -102 dB; within the scope of -20℃~120℃, the temperature coefficient was 6.2 ppm/℃. The proposed design is especially applicable for the chip of the ultrahigh RFID tag requiring low cost and low power consumption.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2017-08-28。
基金项目:国家自然科学基金重点项目(61531016);四川省科技支撑计划重点项目(2016GZ0059);四川省科技支撑计划重点项目(2017GZ0110)
作者简介:廖陆威(1993-),男,硕士研究生;冯全源(1963-),男,教授,博士生导师
通讯作者:冯全源,E-mail:fengquanyuan@163.com
更新日期/Last Update: 2018-06-14