[1]李梓烨,高峰,安子博,等.以沉淀白炭黑为硅源制备硼掺杂碳化硅的研究[J].应用科技,2018,45(06):92-96.[doi:10.11991/yykj.201803006]
 LI Ziye,GAO Feng,AN Zibo,et al.Preparation of the B-doped SiC using precipitated silica-white as silicon source[J].Applied science and technology,2018,45(06):92-96.[doi:10.11991/yykj.201803006]
点击复制

以沉淀白炭黑为硅源制备硼掺杂碳化硅的研究(/HTML)
分享到:

《应用科技》[ISSN:1009-671X/CN:23-1191/U]

卷:
第45卷
期数:
2018年06期
页码:
92-96
栏目:
材料与化学
出版日期:
2018-11-05

文章信息/Info

Title:
Preparation of the B-doped SiC using precipitated silica-white as silicon source
作者:
李梓烨1 高峰1 安子博1 薛俊12 曹宏12
1. 武汉工程大学 材料科学与工程学院, 湖北 武汉 430074;
2. 湖北省环境材料与膜技术工程技术研究中心, 湖北 武汉 430074
Author(s):
LI Ziye1 GAO Feng1 AN Zibo1 XUE Jun12 CAO Hong12
1. School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;
2. Engineering Research Center of Environmental Materials and Membrane Technology of Hubei province, Wuhan 430074, China
关键词:
碳热还原法掺杂β-SiC沉淀白炭黑高比表面积禁带宽度葡萄糖
Keywords:
carbothermal redctionBdopeβ-SiCprecipitated silicahigh surface areaband gapglucose
分类号:
O643
DOI:
10.11991/yykj.201803006
文献标志码:
A
摘要:
为低成本、规模化制备高比表面积碳化硅,以工业级沉淀白炭黑为硅源,葡萄糖粉剂为碳源,采用简单的碳热还原法制备了硼掺杂高比表面积碳化硅。利用X射线衍射仪、扫描电镜、比表面积测试仪和紫外-可见吸收光谱测试方法对碳化硅的晶型、形貌、表面性质及能带结构进行了表征。分析结果表明:B原子进入SiC晶格并取代Si点位,在1 350 ℃焙烧温度时,SiC具有最高比表面积和较低禁带宽度,随着B/Si摩尔比增大,SiC结晶度提高,比表面积减小,禁带宽度减小。
Abstract:
Boron-doped SiC with high specific surface area was prepared by a simple carbothermal reduction method using industrial-grade precipitated silica-white and glucose powder as carbon and silicon sources respectively. It provides an effective method for low cost and large-scale preparation of SiC with high specific surface area. The crystal structure, morphology, surface property and band gap structure of SiC were characterized using X-ray diffraction, scanning electron microscopy, specific surface area analyzer, and ultraviolet-visible absorption spectroscopy. The characterization result indicates that B atoms have doped into the SiC lattice and substituted Si sites. When the roasting temperature is 1350℃, the SiC has the largest specific surface area and a lower band gap. With the B/Si molar ratio increasing, the crystallinity of SiC increased, while the band gap and specific surface area of SiC decreased.

参考文献/References:

[1] WU Renbing, ZHOU Kun, YUE C Y, et al. Recent progress in synthesis, properties and potential applications of SiC nanomaterials[J]. Progress in materials science, 2015, 72:1-60.
[2] LEVINSHTEIN M E, RUMYANTSEV S L, SHUR M S. Properties of advanced semiconductor materials[M]. New York:Wiley, 2001.
[3] PRESSER V, NICKEL K G. Silica on silicon carbide[J]. Critical reviews in solid state and materials sciences, 2008, 33(1):1-99.
[4] 郝建英. 高比表面积碳化硅制备及光解水性能研究[D]. 北京:中国科学院大学, 2012.
[5] 尹长霞. 超细碳化硅微粉的制备及反应烧结碳化硅性能的研究[D]. 武汉:武汉理工大学, 2012.
[6] 朱文振, 郑治祥, 姜坤, 等. 碳热还原法低温制备碳化硅微粉[J]. 硅酸盐通报, 2012, 31(1):46-49.
[7] 郝雅娟, 靳国强, 郭向云. 碳热还原制备不同形貌的碳化硅纳米线[J]. 无机化学学报, 2006, 22(10):1833-1837.
[8] 宋久旭, 杨银堂, 柴常春, 等. 掺氮3C-SiC电子结构的第一性原理研究[J]. 西安电子科技大学学报:自然科学版, 2008, 35(1):87-91.
[9] 杨会静. 典型电介质材料的微波介电及吸波性能研究[D]. 北京:北京理工大学, 2015.
[10] AGATHOPOULOS S. Influence of synthesis process on the dielectric properties of B-doped SiC powders[J]. Ceramics international, 2012, 38(4):3309-3315.
[11] 谢英鹏, 王国胜, 张恩磊, 等. 半导体光解水制氢研究:现状、挑战及展望[J]. 无机化学学报, 2017, 33(2):177-209.
[12] LI Zhimin, ZHOU Wancheng, SU Xiaolei, et al. Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis[J]. Journal of alloys and compounds, 2011, 509(3):973-976.
[13] 董莉莉, 王英勇, 童希立, 等. 硼掺杂SiC的制备、表征及其可见光分解水产氢性能(英文)[J]. 物理化学学报, 2014, 30(1):135-140.
[14] YANG Tao, CHANG Xiwang, CHEN Junhong, et al. B-doped 3C-SiC nanowires with a finned microstructure for efficient visible light-driven photocatalytic hydrogen production[J]. Nanoscale, 2015, 7(19):8955-8961.

相似文献/References:

[1]陈猛,敖文乐,陶涛,等.Ni改性LiFe1-xNixPO4的结构与电化学性能[J].应用科技,2009,36(04):4.
 CHEN Meng,AO Wen-le,TAO Tao,et al.The structure and performance of LiFe1-xNixPO4 prepared by carbothermal reduction method[J].Applied science and technology,2009,36(06):4.

备注/Memo

备注/Memo:
收稿日期:2018-03-14。
基金项目:国家科技支撑计划项目(2013BAB07B05);国家自然科学基金项目(71303180);武汉工程大学研究生教育创新基金项目(CX2017017)
作者简介:李梓烨(1995-),男,硕士研究生;薛俊(1976-),女,副教授,博士
通讯作者:薛俊,E-mail:120373109@qq.com
更新日期/Last Update: 2018-11-02