[1]范正勤,韩国军.多电平闪存信道下阈值电压高效检测算法[J].应用科技,2019,46(05):57-62.[doi:10.11991/yykj.201901015]
 FAN Zhengqin,HAN Guojun.High-efficiency detection algorithm for threshold voltage in multi-level cell NAND flash memory[J].Applied science and technology,2019,46(05):57-62.[doi:10.11991/yykj.201901015]
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多电平闪存信道下阈值电压高效检测算法(/HTML)
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《应用科技》[ISSN:1009-671X/CN:23-1191/U]

卷:
第46卷
期数:
2019年05期
页码:
57-62
栏目:
现代电子技术
出版日期:
2019-09-05

文章信息/Info

Title:
High-efficiency detection algorithm for threshold voltage in multi-level cell NAND flash memory
作者:
范正勤 韩国军
广东工业大学 信息工程学院, 广东 广州 510000
Author(s):
FAN Zhengqin HAN Guojun
School of Information Engineering, Guangdong University of Technology, Guangzhou 510000, China
关键词:
阈值电压检测NAND闪存重读机制原始误码率电压重叠区读电压优化读时延数据存储
Keywords:
threshold-voltage detectionNAND flash memoryread-retry mechanismraw bit error ratevoltage overlap regionread voltage optimizationread latencydata storage
分类号:
TN919.5
DOI:
10.11991/yykj.201901015
文献标志码:
A
摘要:
针对高密度NAND闪存阈值电压检测时读操作带来的时延问题,提出一种改进的低时延重读机制。首先,基于电压重叠区原始误码率的分布特性,引入三分法的思想以逐步降低电压检测的范围。其次,该方案每一次缩小电压检测范围时只需要更新一次读操作。仿真结果表明相对于传统的重读机制,该优化方案不仅可以保证数据存储的可靠性,同时也极大地降低读时延。
Abstract:
Aiming at reducing read latency caused by read operation in high-density NAND flash memory threshold-voltage detection, an improved low-latency read-retry mechanism is proposed. Specifically, according to the distribution characteristics of the raw bit error rate in the voltage overlap region, the scheme introduces the idea of trichotomy to gradually reduce the range of threshold-voltage detection. Furthermore, only one read operation needs to be updated each time the range of voltage detection is narrowed. Simulation results exhibit that the proposed mechanism of the paper, which well ensures the data-storage reliability, significantly reduces the read latency through comparison with traditional read-retry mechanism.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2019-01-23。
基金项目:国家自然科学基金项目(61471131)
作者简介:范正勤,女,硕士研究生;韩国军,男,教授,博士生导师
通讯作者:韩国军,E-mail:gjhan@gdut.edu.cn
更新日期/Last Update: 2019-08-29